http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5406 3.6a , 30v , r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 1 of 4 top view a l c b d g h j f k e 1 2 3 1 2 3 s c - 59 top view rohs compliant product a suffix of -c specifies halogen and lead-free description the SMG5406 utilized advanced processing techniques to achieve the lowest possible on-resist ance, extremely efficient and cost-effectiveness device. the SMG5406 is universally used for all commercial-indu strial applications. features simple drive requirement small package outline marking 5406 package information package mpq leader size sc-59 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 2 , v gs @10v t a =25c i d 3.6 a t a =70c 2.8 pulsed drain current 1 i dm 10 a power dissipation t a =25c p d 1.38 w linear derating factor 0.01 w / c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 2 r ja 90 c / w notes: 1. pulse width limited by max. junction temperatur e. 2. surface mounted on 1 in 2 copper pad of fr4 board; 270 /w when mounted on min. copper pad. ref. millimeter ref. millimeter min . max. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 1 2 3
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5406 3.6a , 30v , r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 2 of 4 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 1 - 3 v v ds =v gs , i d =250 a gate-body leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 1 a v ds =30v, v gs =0 - - 10 v ds =24v, v gs =0 drain-source on-resistance 1 r ds(on) - - 65 m v gs =10v, i d =3.6a - - 90 v gs =4.5v, i d =2.8a forward transconductance g fs - 11 - s v ds =5v, i d =3.6a dynamic total gate charge 1 q g - 3 5 nc v ds =24v, v gs =4.5v, i d =2.5a gate-source charge q gs - 0.8 - gate-drain charge q gd - 1.8 - turn-on delay time 1 t d(on) - 5 - ns v ds =15v, v gs =10v, r g =3.3 , r d =15 , i d =1a rise time t r - 9 - turn-off delay time t d(off) - 11 - fall time t f - 2 - input capacitance ciss - 120 290 pf v gs =0, v ds =25v, f=1.0mhz output capacitance coss - 62 - reverse transfer capacitance crss - 24 - gate resistance rg - 3.5 - f=1.0mhz source-drain diode diode forward voltage 1 v sd - - 1.0 v i s =1a, v gs =0 reverse recovery time 1 t rr - 7.5 - ns i s =3.5a, v gs =0 di/dt=100a/ s reverse recovery charge q rr - 2.5 - nc notes: 1. pulse width Q 300us, duty cycle Q 2%.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5406 3.6a , 30v , r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SMG5406 3.6a , 30v , r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 4 of 4 characteristic curves
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